Factory Lead Time  

12 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

202A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

333W Tc

Turn Off Delay Time  

46 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2003

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Resistance  

4mOhm

Additional Feature  

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Voltage - Rated DC  

40V

Current Rating  

162A

Lead Pitch  

2.54mm

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

333W

Case Connection  

DRAIN

Turn On Delay Time  

17 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4m Ω @ 121A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

5669pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

196nC @ 10V

Rise Time  

190ns

Vgs (Max)  

±20V

Fall Time (Typ)  

33 ns

Continuous Drain Current (ID)  

202A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

75A

Drain to Source Breakdown Voltage  

40V

Pulsed Drain Current-Max (IDM)  

808A

Dual Supply Voltage  

40V

Avalanche Energy Rating (Eas)  

620 mJ

Recovery Time  

117 ns

Max Junction Temperature (Tj)  

175°C

Nominal Vgs  

4 V

Height  

19.8mm

Length  

10.668mm

Width  

4.826mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free